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www.irf.com 1 so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a IRF7811A hexfet power mosfet v dss r ds(on) max q g 28v 12m ? 17nc notes through are on page 10 applications benefits very low rds(on) at 4.5v v gs ultra-low gate impedance fully characterized avalanche voltage and current high frequency synchronous buck converters for computer processor power high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use 100% r g tested absolute maximum ratings symbol parameter units i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c v gs gate-to-source voltage v t j operating junction and t stg storage temperature range smoldering temperature, for 10 seconds thermal resistance symbol parameter typ max units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 max 11 9.1 91 w c/w 300 (1.6mm from case) c -55 to + 150 2.5 0.02 1.6 12
IRF7811A 2 www.irf.com static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units bv dss drain-to-source breakdown voltage 28 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.025 ??? v/c ??? 8.7 10 ??? 10 12 v gs(th) gate threshold voltage 1.0 ??? 3.0 v ? v gs(th) gate threshold voltage coefficient ??? -4.0 ??? mv/c ??? ??? 1.0 ??? ??? 150 gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 g fs forward transconductance 28 ??? ??? s q g total gate charge ??? 17 26 q gs1 pre-vth gate-source charge ??? 3.3 ??? q gs2 post-vth gate-source charge ??? 1.3 ??? q gd gate-to-drain charge ??? 4.7 ??? q godr gate charge overdrive ??? 7.2 ??? see fig. 16 q sw switch char g e (q gs2 + q gd ) ??? 6.0 ??? q oss output charge ??? 24 ??? nc r g gate resistance 0.9 ??? 3.7 ? t d(on) turn-on delay time ??? 7.5 ??? t r rise time ??? 4.1 ??? t d(off) turn-off delay time ??? 19 ??? t f fall time ??? 6.5 ??? c iss input capacitance ??? 1760 ??? c oss output capacitance ??? 960 ??? c rss reverse transfer capacitance ??? 54 ??? avalanche characteristics symbol parameter units e as sin g le pulse avalanche ener g y mj i ar avalanche current a diode characteristics symbol parameter min. typ. max. units continuous source current (body diode) pulsed source current ( bod y diode ) ??? 0.8 1.0 ??? 0.66 ??? t rr reverse recovery time ??? 72 110 ns q rr reverse recovery charge ??? 93 140 nc t rr reverse recovery time ??? 73 110 ns q rr reverse recovery charge ??? 100 150 nc mosfet symbol v gs = 4.5v, i d = 9.0a v gs = 4.5v typ. ??? ??? i d = 9.0a v gs = 0v v ds = 15v t j = 25c, i f = 9.0a, v r = 15v di/dt = 100a/s t j = 25c, i s = 9.0a, v gs = 0v showing the integral reverse p-n junction diode. v dd = 15v, v gs = 4.5v i d = 9.0a v ds = 15v v ds = v gs , i d = 250a ? = 1.0mhz conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 11a v ds = 30v, v gs = 0v v ds = 24v, v gs = 0v, t j = 100c clamped inductive load v ds = 15v, i d = 9.0a v ds = 16v, v gs = 0v t j = 125c, i f = 9.0a, v r = 15v di/dt = 100a/s v gs = 12v v gs = -12v conditions max. 58 9.0 r ds(on) static drain-to-source on-resistance m ? i dss drain-to-source leakage current a a i gss i s i sm ??? ??? ??? 11 91 ??? na nc ns pf diode forward voltage v sd v t j = 125c, i s = 9.0a, v gs = 0v
IRF7811A www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.5v 20s pulse width tj = 150c
-60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 11a v gs = 10v 1.4 1. 8 2. 2 2. 6 3. 0 3. 4 v gs , gate-to-source voltage (v) 0. 01 0. 10 1. 00 10.00 100. 00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 15v 20s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.5v 20s pulse width tj = 25c

IRF7811A 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) cos s crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 10203040 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds =1 5v i d = 9.0a 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
IRF7811A www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms 1 !"# 0.1 %

+ - fig 9. maximum drain current vs. ambient temperature 25 50 75 100 125 150 t j , junction temperature (c) 0 2 4 6 8 10 12 i d , d r a i n c u r r e n t ( a )
IRF7811A 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14. basic gate charge test circuit fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 0 102030405060 i d , drain current (a) 0.005 0.007 0.009 0.011 0.013 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 10v v gs = 4.5v 2. 0 3. 0 4.0 5. 0 6. 0 7. 0 8. 0 9. 0 10. 0 v gs , gate -to -source voltage (v) 0. 00 0. 01 0. 02 0. 03 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 9.0a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j )
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IRF7811A www.irf.com 7 fig 15.
for n-channel hexfet power mosfets &#!' "&"(# "( ? '")# *(! (! ? #"( ( ? '")' + ,*(! (! &##(# (-"#.# p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? /0!"(#"12 ? #/# .3 4 ? * !"(#"1 !"#55 ? 46/!4(# fig 16. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr
IRF7811A 8 www.irf.com control fet

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#' p loss = p conduction + p switching + p drive + p output this can be expanded and approximated by; p loss = i rms 2 r ds(on ) () + i q gd i g v in f ? ? ? ? ? ? + i q gs 2 i g v in f ? ? ? ? ? ? + q g v g f () + q oss 2 v in f ? ? ? ? " (

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synchronous fet the power loss equation for q2 is approximated by; p loss = p conduction + p drive + p output * p loss = i rms 2 r ds(on) () + q g v g f () + q oss 2 v in f ? ? ? ? ? + q rr v in f ( ) *dissipated primarily in q1. for the synchronous mosfet q2, r ds(on) is an im- portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. under light load the mosfet must still be turned on and off by the con- trol ic so the gate drive losses become much more significant. secondly, the output charge q oss and re- verse recovery charge q rr both generate losses that are transfered to q1 and increase the dissipation in that device. thirdly, gate charge will impact the mosfets? susceptibility to cdv/dt turn on. the drain of q2 is connected to the switching node of the converter and therefore sees transitions be- tween ground and v in . as q1 turns on and off there is a rate of change of drain voltage dv/dt which is ca- pacitively coupled to the gate of q2 and can induce a voltage spike on the gate that is sufficient to turn the mosfet on, resulting in shoot-through current . the ratio of q gd /q gs1 must be minimized to reduce the potential for cdv/dt turn on. power mosfet selection for non-isolated dc/dc converters figure a: q oss characteristic
IRF7811A www.irf.com 9 so-8 package details so-8 part marking e x a m p l e : t h i s i s a n i r f 7 1 0 1 ( m o s f e t ) i n t e r n a t i o n a l r e c t i f i e r l o g o f 7 1 0 1 y w w x x x x p a r t n u m b e r l o t c o d e w w = w e e k y = l a s t d i g i t o f t h e y e a r d a t e c o d e ( y w w ) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 basic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max mi l l i me t e r s inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4 . ou t l i ne conf or ms t o j e de c ou t l i ne ms -0 12 aa. not e s : 1. dimensioning & t olerancing per asme y14.5m-1994. 2. controlling dimension: millimeter 3. dimens ions are s hown in millimet ers [inche s ]. 5 dimens ion does not include mold prot rus ions . 6 dimens ion does not include mold prot rus ions . mold protrusions not t o exceed 0.25 [.010]. 7 dimension is the length of lead for soldering to a s ubs trate. mold protrusions not t o exceed 0.15 [.006]. 8x 1.78 [.070]
IRF7811A 10 www.irf.com repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 1.4mh r g = 25 ? , i as = 9.0a. pulse width 300s; duty cycle 2%. when mounted on 1 inch square copper board 7 !"#$% 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/03 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site.

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